http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007039754-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2007-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_999fac2e26b1f5b3cdf7499c31c5d451 |
| publicationDate | 2008-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102007039754-A1 |
| titleOfInvention | Process for the production of substrates |
| abstract | ThenInvention relates to a process for the production of substrates,nfor example as semiconductor substrates. It is the task ofnInvention possibilities to providenwith which substrates can be produced inexpensively, andnwith which an impairment of the substrate materialnis avoidable. In the method according to the inventionnshould connect from a front side of the substratenpassed the substrate through to its backnbecome. In the substrate is at least one recess of thenFront of the substrate with a predetermined minimum depth by an etching processneducated. Then the depression (s) is filled with a substancenand / or the inner wall of the recess (s) is / are over the entire surfacenprovided with an electrically insulating coating and thennfilled with a substance. Subsequently, willnstarting from the back of the substrate whose thicknessnmechanically reduced by abrasive material removal untilna predeterminable distance of the disturbed by the abrasive material removalnArea of the substrate is reached by the depression and subsequentlynby wet-chemical etching in two to four stagesnwith two different etching liquidsnfirst substrate material and then fabric and / or electrically insulatingnCoating material to be removed at least in the directionnRear side of the substrate facing end face ofnWell (s) is exposed. In the two stages you will ... |
| priorityDate | 2007-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.