http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007022533-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcb788ac2ea1a772ff0a53a49e5e2375 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26566 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2007-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86eb9cef3774c96b9de4fa63cb2eae98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d45c7b289b803272cd44fa359cbb89d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f95af001798e691fbf7bba51cda23d7c |
| publicationDate | 2008-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102007022533-A1 |
| titleOfInvention | Method for producing a semiconductor element and semiconductor element |
| abstract | atna method of manufacturing a semiconductor element in onenSubstrate first implant ions are implanted in the substrate,nwhereby in a first subregion of the substrate micro-cavitiesnbe generated. Further, pre-amorphization ions are introduced into the substratenimplanted, whereby a second portion of the substrate at leastnis partially amorphized and which causes crystal defects in the substratenbe generated. Further, second implant ions are introduced into thenimplanted second portion of the substrate. Further, the substrate becomesnheated so that at least some of the crystal defects are usingnthe micro-cavities and / or the second implant ion is eliminatednbecomes. Furthermore, doping atoms are in the second portion of the substratenimplanted, wherein the semiconductor element using the doping atomsnis formed. |
| priorityDate | 2007-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.