http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006062815-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 |
| filingDate | 2006-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_992841a05675e180a09a662c9387b05e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cd2684413322637280b2c8df6fb0a00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e5ffe1cf63361cf9eeac1f91f3ca8da |
| publicationDate | 2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102006062815-B4 |
| titleOfInvention | Oxide semiconductor electrode, dye-sensitized solar cell and process for their preparation |
| abstract | An oxide semiconductor electrode for a dye-sensitized solar cell comprising a base material, a bonding layer formed on the base material made of a thermoplastic resin, a first electrode layer formed on the bonding layer made of a metal oxide, and a porous layer deposited on the first electrode layer is formed and contains fine particles of a metal oxide semiconductor comprises, wherein the porous layer is composed of an oxide semiconductor layer in contact with the first electrode layer and an intermediate layer formed on the oxide semiconductor layer having a porosity higher than that of the oxide semiconductor layer, wherein the porosity of the oxide semiconductor layer is in the range of 10 to 60% and the porosity of the intermediate layer is in the range of 25 to 65%, wherein the thermoplastic resin comprises a silane-modified resin, wherein the silane-modified resin comprises a copolymer of a polyolefin compound and an ethylenically unsaturated silane compound. |
| priorityDate | 2005-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 266.