| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3878 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-593 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-593 |
| filingDate |
2006-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_295267ee28f78346a84c996c6babdbbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51e2a06b60f7b12a2779ef0f1d9fd6b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6cb79439ba74fd7868514ed387fbd38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d57d4e394a3b8226cbe957767c8f8aa |
| publicationDate |
2011-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102006059402-B4 |
| titleOfInvention |
Silicon nitride-based material, process for its preparation and its use |
| abstract |
Process for the preparation of a silicon nitride-based material, comprising a powder mixture comprising 40 to 75% by volume of fine-grained α-Si 3 N 4 and / or β-Si 3 N 4 together with at least one sintering additive and 25 to 60% by volume coarse-grained fraction of α-Si 3 N 4 having an average particle size of at least 1.5 microns, is prepared, followed by a compression under a pressure ≥ 10 MPa is carried out at temperatures above 1450 ° C, wherein the sintering additive during sintering forms a liquid phase in which the fine-grained α-Si 3 N 4 and / or β-Si 3 N 4 dissolves and anisotropic acicular grain growth of β-Si 3 N 4 is induced, which leads to the formation of a fracture-resistant matrix which is bound to the substantially as α-Si 3 N 4 remaining, coarse-grained fraction. |
| priorityDate |
2006-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |