http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006041805-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7443f9fa412762a1a5ba8390a27fc5e3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2006-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1cdc6099b1a5b9531f309e4a54af289 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_196c07fccf4ae485ef88c45c62b822dc |
| publicationDate | 2017-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102006041805-B4 |
| titleOfInvention | Polymer polishing slurry for barrier removal |
| abstract | An aqueous slurry suitable for chemical mechanical polishing for removing a barrier material of a semiconductor substrate having copper compounds, comprising 0.01 to 25% by weight of an oxidizing agent, 0.1 to 50% by weight of abrasive particles, 0.002 to 3 % By weight of polyvinylpyrrolidone, 0.01 to 10% by weight of an inhibitor for reducing the static etching of the copper compounds, 0.001 to 5% by weight of a phosphate compound selected from at least one of ammonium phosphate, potassium phosphate and dipotassium phosphate to increase the removal rate of the copper compounds, 0.0001 to 0.1% by weight of ammonium chloride to increase the removal rate of the copper compounds, 0.001 to 10% by weight of a complexing agent selected from the group consisting of acetic acid, citric acid, ethyl acetoacetate, glycolic acid, lactic acid , Malic acid, oxalic acid, salicylic acid, sodium diethyldithiocarbamate, succinic acid, tartaric acid, thioglyc oleic acid, glycine, alanine, aspartic acid, ethylenediamine, trimethyldiamine, malonic acid, glutaric acid, 3-hydroxybutyric acid, propionic acid, phthalic acid, isophthalic acid, 3-hydroxysalicylic acid, 3,5-dihydroxysalicylic acid, gallic acid, gluconic acid, pyrocatechol, pyrogallol, tannic acid and salts thereof, and the remainder being water, the aqueous slurry having a pH of at least 8. |
| priorityDate | 2005-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 127.