http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006035485-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec540cc2be4dc99ffa126c599b7d46c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ae098cc47e313b0e828842b36249cc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec3241098ad3a9010172182bbe26a23 |
| publicationDate | 2010-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102006035485-B4 |
| titleOfInvention | Method for producing a semiconductor device |
| abstract | A method of manufacturing a semiconductor device (100), the method comprising: Growing a Group III nitride-based semiconductor crystal (10) on a substrate (11); an electrode forming step of forming metal-layered electrodes (13) having an island-like structure on a surface of a semiconductor crystal (10) grown on a crystal growth substrate (11), the surface facing the surface facing the crystal growth substrate so that each electrode is provided in a region which corresponds to a semiconductor device chip (100); a step of bonding the electrodes to an electrically conductive substrate, bonding the carrier substrate (20), to support the crystalline semiconductor by using a conductive first adhesive (30); a step of filling a second resin-containing adhesive (40) into spaces (30) formed between the semiconductor crystal and the support substrate at intervals where the support substrate is to be separated into individual chips; a laser removal step of removing the ... |
| priorityDate | 2005-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.