http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006035005-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0332d288b73ae34f372ef93b9f5220d3 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-24 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-20 |
filingDate | 2006-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_637f64a4dbfc494d05da88fa9ea8ccba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e02e4bcb5213a5926b172327d6f3d21 |
publicationDate | 2007-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-102006035005-A1 |
titleOfInvention | Megavolt imaging with a photoconductor-based sensor |
abstract | OnenPhotodetector for the detection of megavolt (MV) radiation, comprisingna semiconductor conversion layer having a first area andnone of the first surfacenoppositensecond surface, onenwith the first surfacencoupled first electrode, one coupled to the second surfacensecond electrode, and a low-density substrate comprisingna detector array connected to the second electrode opposite thenSemiconductor conversion layer is coupled. The photodetector comprises ansufficient thickness of a material of high density to from incidentnMV radiation to generate a sufficient number of photoelectrons,nso that the photoelectronsncan be received by the conversion layer and in a sufficientnNumber of load carriersncan be convertednwhich are detected by the detector array. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2147334-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2147334-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008144414-A1 |
priorityDate | 2005-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.