| abstract |
Contacting arrangement for a semiconductor component having a semiconductor body (7), in which a contacting wire (4) having projections (5) is electrically connected to a contacting surface (3) provided on the semiconductor body (7), which is surrounded by an insulating layer (1), so that the surface of the insulating layer (1) is higher than the contacting surface (3), in which on the contacting surface (3) a reinforcing layer (9) is applied, via which the contacting wire (4) is electrically connected to the contacting surface (3) and in which the layer thickness of the reinforcing layer (9) is so large that the surface of the reinforcing layer (9) is the same height as the surface of the insulating layer (1) in the vicinity of the reinforcing layer (9), the reinforcing layer (9 ) is a copper layer having a layer thickness of 10 to 30 microns. |