| abstract |
The invention relates to a method for producing an electrical and / or optical component. In order to achieve that a particularly good quality of the component is achieved and in particular crystal dislocations in the material layers of the component are reliably avoided, a method for producing a component (70, 300, 405) is provided according to the invention, in which a substrate (10) at least one trench (30) is etched, the trench with at least one semiconductor layer (50) is laterally overgrown such that the trench is completely covered by the semiconductor layer to form a gas-filled, in particular air-filled cavity (60) and the device in the semiconductor layer or is integrated in a further semiconductor layer applied to the semiconductor layer, wherein the active region of the component is arranged above the cavity. |