| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdd8e8537bf4fcab81030cb3b1535c22 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2005-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc6e189c183f2007a5b84726c137487e |
| publicationDate |
2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102005005325-B4 |
| titleOfInvention |
Method for producing a resistively switching non-volatile memory cell |
| abstract |
A method of fabricating a resistive switching memory cell, comprising the steps of: a) depositing a first electrode, b) applying a layer of a chalcogenide compound to the first electrode, in which c) in a step following step b, first a metallic doping layer of silver or copper is applied to the layer of the chalcogenide compound deposited in step b, and d) after step c, a silver or copper diffusion from the doping layer applied in step c in a noble gas plasma into the layer of the chalcogenide compound is carried out by a back sputtering method. |
| priorityDate |
2005-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |