| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e2fb6f32d4e7ec9762d49b2447ddb94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c5aa6d7e2e2855cf19c340c995bb39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_635662850f07e71769f192d6e1359081 |
| publicationDate |
2006-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102005004384-A1 |
| titleOfInvention |
A method of making a defined recess in a damascene structure using a CMP process and a damascene structure |
| abstract |
The present invention provides a technique that enables the formation of a deeper upper surface of a connection line to form an inserted barrier cover layer on a connection line, such that the line has improved properties in terms of electromigration, electrical conductivity, device reliability, and device performance. The deeper upper surface of the connection line is formed by means of a suitably adapted CMP process, which allows the removal of the metal of an upper portion of the connection line, while adjacent raised barrier layer areas are substantially not affected. |
| priorityDate |
2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |