| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71ecaddcf2230dc1ff021116a3b5c540
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82e15873185dec4802fe08cc4cda7308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3c0e0f408d65a4532fbdfc2a8895120
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aeeb0023750c631b29ed6d6b66b614b |
| publicationDate |
2006-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102005004366-A1 |
| titleOfInvention |
Method for producing conductive structures in an integrated circuit arrangement and circuit arrangement |
| abstract |
It is explainedna method in which an electrically conductive growth nucleation layernis applied. The method is especially for manufacturingna lower metallization used, wherein an electricalninsulating insulating layer only after the application of the nucleation layernis applied and structured so that selectively to be plated areasnof the nucleation layer are exposed. At the nucleation layer becomesnthen electrically conductivenMaterial (29) deposited. Subsequently, the nucleation layernremoved again. The result is a lead structure (28) with columnarngrainsnand a very small minimum lateral dimension, e.g. B. smallernas 500 nanometers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102007004884-A1 |
| priorityDate |
2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |