http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004055147-B4
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_364d1f4c8e0186b6665af130449dc42a |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66287 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
filingDate | 2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c780b361220a1f75081bf263d603db3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f316c931fa540c1d204f7c6463f2b586 |
publicationDate | 2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-102004055147-B4 |
titleOfInvention | Method for producing a doped extrinsic base bipolar transistor |
abstract | Method for producing a bipolar transistor with the steps Defining an active transistor region on a semiconductor substrate - Epitaxial growth of a base layer Generating an emitter window and exposing the surface of the base layer therein - Applying and structuring an emitter layer, wherein the structuring is carried out with a resist mask Directly after the patterning of the resist mask, doping of the extrinsic region of the base layer by plasma in contact with the array containing a dopant, the emitter remaining covered by the resist mask. |
priorityDate | 2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.