| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_364d1f4c8e0186b6665af130449dc42a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66287 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate |
2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c780b361220a1f75081bf263d603db3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f316c931fa540c1d204f7c6463f2b586 |
| publicationDate |
2006-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102004055147-A1 |
| titleOfInvention |
Method for producing a doped extrinsic base bipolar transistor |
| abstract |
ThenInvention proposesnin front, a whole areangenerated epitaxially grown base layer by subsequent dopingnhigh doping in the extrinsic region and thus a low-resistancenBasic connection to create. For gentle doping of the base layernin the extrinsic area, the semiconductor surface becomes ana dopant-containing plasma or a gas phase with anExposed dopant. |
| priorityDate |
2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |