http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004030612-B3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ac179bcbad17b8ea0260c65f201da92 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E01D19-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate | 2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e62563c71bf438266ef7cd3f6a4ef8a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39de71140ff04caac607e0f7c7a073b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4195d28b8128ff519f59ce194632b5fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32488a508beab52465f0058b43cdc994 |
| publicationDate | 2006-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102004030612-B3 |
| titleOfInvention | Semiconductor substrate and method for its production |
| abstract | The invention relates to a method for producing a semiconductor substrate, comprising a carrier disk (2) and a layer (8) of monocrystalline semiconductor material on one side of the carrier disk (2), the method comprising the following steps in the order given: a) producing a recess (3) containing layer on the surface of a donor disk (1), consisting of the monocrystalline semiconductor material, b) connecting the depressions (3) containing layer of the donor disc (1) with the carrier disc (2), c) thermal treatment for closing the depressions (3) at the interface (4) between the carrier disc (2) and the donor disc (1), so that a layer of cavities (6) within the donor disc (1) is formed, and d) splitting the donor disc (1) along the layer of cavities (6) so that a layer (8) consisting of the semiconductor material remains on the carrier disc (2). The invention also relates to a semiconductor substrate, comprising a carrier disk (2) and a layer (8) consisting of monocrystalline semiconductor material, characterized in that the layer (8) has a thickness of 100 nm or less, a layer thickness uniformity of 5% or less and has an RF defect density of 0.02 / cm 2 or less. |
| priorityDate | 2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.