http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004013478-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_364d1f4c8e0186b6665af130449dc42a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66287 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2004-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1956a9e35d102302e98b8d8e1c12d4b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c780b361220a1f75081bf263d603db3 |
| publicationDate | 2010-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102004013478-B4 |
| titleOfInvention | Method for producing a bipolar transistor with improved base connection |
| abstract | A method of fabricating a high doped extrinsic base (EB) bipolar transistor, in which A semiconductor layer (BS) of semiconductor material is provided on a semiconductor substrate (HLS), A dielectric layer (DS) is produced on the base layer (BS), Using a mask covering an intrinsic base (IB) region, introducing BF 2 for doping into the dielectric layer (DS) over an extrinsic base (EB) region; and A diffusion of the dopant from the dielectric layer (DS) into the region of the base layer (BS) provided for the extrinsic base (EB) is effected in a controlled thermal step. |
| priorityDate | 2004-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.