| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0705 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07 |
| filingDate |
2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcb954e7366d46ec88a5a7d8a615cda3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_670cc704646d27cbafba05159e393b25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9afdb5e131e6440316eaf38e29003cad |
| publicationDate |
2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102004006537-B4 |
| titleOfInvention |
A semiconductor device formed by a silicon carbide substrate and a method of manufacturing the same |
| abstract |
Semiconductor device comprising: a first field effect transistor (20) including a source (S1) and a gate (G1) and disposed in a silicon carbide substrate (10), and a second field effect transistor (21) including a drain (D2) and a gate (G2) and disposed in the silicon carbide substrate (10), wherein the drain (D2) of the second field effect transistor (21) is connected to the source (S1) of the first field effect transistor (20), wherein the gate (G2) of the second field effect transistor (21) is connected to the gate (G1) of the first field effect transistor (20), wherein the silicon carbide substrate (10) contains: a first layer (1) of silicon carbide which is heavily doped with a first impurity of a first conductivity type, a second silicon carbide layer (2) lightly doped with the first impurity, and a third silicon carbide layer (3) moderately doped with the first impurity, wherein the second layer (2) is arranged on the first layer (1) ... |
| priorityDate |
2003-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |