| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76283 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2001-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_740a538c0821544a080398e7c50f4898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7ca1397a976e8dbe9eca4d9796898ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11899ccb0745cfd776f526204707c8b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c11d8a5b8c76c3cbae09daa77f3fd64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b68a40f1213cb80dc7358cc82f1038f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58f4fe19212a34ac2727eb8431fbb462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e75f857d668c863ad50aa9321bd574d |
| publicationDate |
2002-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10155452-A1 |
| titleOfInvention |
Semiconductor device and manufacturing method of the semiconductor device |
| abstract |
A semiconductor device is provided which can prevent disadvantages caused by metal contamination and a method of manufacturing such a semiconductor device. A region (NR) and a region (PR) are delimited by a trench isolation oxide film (ST21), a polysilicon film (PS21) is selectively provided on the trench isolation oxide film (ST21), a silicon layer (S22) is provided on the polysilicon film (PS21), and a sidewall spacer layer (SW2) is provided on a side surface of the polysilicon film (PS21). The polysilicon film (PS21) is provided at a position corresponding to a top of a PN junction portion (JP) of a P-well region (WR11) and an N-well region (WR12) in an SOI layer (3) over the two well regions. |
| priorityDate |
2000-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |