| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2001-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8c275b28e7db7fd8583c0f4738d0bed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_429a2135cd03010f5d8e3d80d79c9ace
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bee26c4188e3c15cf4662ad177d3d674 |
| publicationDate |
2003-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10146359-A1 |
| titleOfInvention |
A metallization process sequence |
| abstract |
In an in-situ damascene metallization process, using a barrier layer between the metal and the dielectric, the creation of small cavities, in particular on the underside of contact openings, can be significantly reduced or even completely avoided by removing the barrier material during the deposition Surface temperature is kept below a critical temperature. |
| priorityDate |
2001-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |