http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10145724-A1

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filingDate 2001-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fa478552f3d0db612c87a1e1b89f9f9
publicationDate 2003-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10145724-A1
titleOfInvention Method of manufacturing a semiconductor structure using a protective layer and semiconductor structure
abstract Among other things, a method is explained in which a semiconductor structure (12) is produced on a substrate (14). A protective layer (10) is then applied to the semiconductor structure (12). In order to produce a further semiconductor structure to be formed on the substrate (14), intermediate processes are carried out which lead to the formation of cracks (38) in the protective layer (10). The protective layer (10) is repaired using a repair layer.
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