http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10144900-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-125 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
| filingDate | 2001-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9604003b0230014985d959b7b4e74205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f947dd40949b90cb91dea5b6a3f761b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_630a487cb0a56739053859d5e55be298 |
| publicationDate | 2003-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10144900-A1 |
| titleOfInvention | Metal oxide semiconductor gas sensor and method for its production |
| abstract | A metal oxide semiconductor gas sensor and a method for its production are proposed, the sensor consisting of a sensor-active metal oxide thin layer applied to a substrate, which is in contact with at least one electrode. The sensor-active metal oxide thin layer is designed as a chromium-titanium oxide (CTO) layer, which has a layer thickness of 10 nm to 1 μm. The chrome and titanium layers are applied one above the other using thin-film techniques and then annealed. |
| priorityDate | 2001-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.