| abstract |
A semiconductor component and a method for the production thereof are specified in which a reliable electrical connection can be achieved in that conductors are directly connected to one another in a secure manner by solid-state bonding, the bonding surfaces being polished by a CMP method. In this polishing process, a through hole conductor (5) and a ground conductor layer (6) made of copper become concave in a plate shape, with a lowered level, since they have a lower hardness than a through hole insulator (11), which is also polished in the process, as a result of which a depression region (17) occurs. The through hole insulator (11) is selectively etched by reactive ion etching until it has a height which corresponds to the height of the bottom (19) of the depression region of the through hole conductor. Then two through hole conductors (5, 25) are aligned facing each other, and the adjacent bonding surfaces (12, 22) are connected to one another by solid-state bonding. |