http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10129928-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-10
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401
filingDate 2001-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fbee002e2d5d583a91a17e64fc87a8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cf2da64289656a9941ca9b33b3a845f
publicationDate 2002-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10129928-A1
titleOfInvention Semiconductor memory device with a structure suitable for high integration
abstract A semiconductor memory device has a plurality of areas. Each area has memory cell arrangements (11, 12), an input / output circuit zone (13), column encoders (14) and a row encoder (15). The input / output circuit zone (13) is arranged between the memory cell arrangements (11, 12). The input / output circuit zone (13) optionally inputs or outputs data into or from the memory cell arrangements (11, 12). As a result, high integration can be easily achieved.
priorityDate 2000-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448688621
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23616742

Total number of triples: 18.