| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d49de4efacc50371121175d075552f39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2001-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_777c30364c28295ae5ead314c14ff335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d70267776a8c874cdf4420d7ff69bcb9 |
| publicationDate |
2002-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10126575-C1 |
| titleOfInvention |
Plasma etching process for MoSiN layers on halftone phase masks based on gas mixtures containing monofluoromethane and oxygen |
| abstract |
The invention relates to a method for etching phase shift layers of halftone phase masks. The phase shifter layer is etched with increased plasma cathode power, which is obtained from CH¶3¶F and O¶2¶. The method shows a very high selectivity between the substrate and the phase shift layer, so that halftone phase masks can be produced with a high imaging quality. |
| priorityDate |
2001-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |