| abstract |
The invention describes a method for structuring a chemically amplified photoresist layer, in which a photoresist layer of the chemically amplified type is brought into contact before or after the structure exposure with a gas comprising a base which can diffuse into the photoresist layer, the base being selected from Group comprising ammonia, methylamine, ethylamine, dimethylamine and / or diethylamine. This base treatment achieves greater steepness and less roughness of the resist profiles in the subsequent development step. |