http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10116875-A1

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filingDate 2001-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ee98bf9bb57a66f69d44321d1450ade
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publicationDate 2002-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10116875-A1
titleOfInvention Method for producing an integrated ferroelectric memory
abstract The invention relates to a method for producing an integrated ferroelectric memory according to the stack-cell principle, wherein transistors are formed on a wafer, then a first intermediate oxide (2) is deposited, and the ferroelectric capacitor modules (1), which are produced with, are deposited on this first intermediate oxide its lower electrode (4) is connected by an underlying electrically conductive plug (8) to a corresponding transistor electrode of a selection transistor, the ferroelectric capacitor modules (1) being produced over the whole area and subsequently structured in one step, and then being structured over the structured ferroelectric capacitors ( 1) a hydrogen diffusion barrier (10) is deposited.
priorityDate 2001-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.