http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10115492-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f063b8222ec3c8e746a415e7f364473 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4539210b25d8e4455439f589b2d31750 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a225c29d4d2e169449eeadf5e9a6b57e |
| publicationDate | 2002-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10115492-A1 |
| titleOfInvention | Process for preparing a reaction chamber |
| abstract | A method for preparing the reaction chamber of an etching reactor and for checking critical dimensions of an etching layer is proposed. After dry cleaning or precautionary maintenance, gaseous nitrogen and hydrogen are admitted into the reaction chamber and a dummy wafer is arranged inside the reaction chamber. A radio frequency energy (RF) source is turned on to initiate a wafer etch. Photoresist material on the dummy wafer reacts with the gases inside the reaction chamber so that high molecular weight particles are formed and the chamber is reprocessed within a very short time. Alternatively, instead of a dummy wafer, a production wafer that is provided with an etch stop layer that can react with gaseous nitrogen and oxygen can be placed inside the reaction chamber after dry cleaning or precautionary maintenance. Gaseous nitrogen and hydrogen are admitted to the reaction chamber and then RF energy is turned on to initiate the etching of the wafer. The gases inside the reaction chamber react with the wafer intended for production, so that high molecular weight particles are quickly generated, whereby the reaction chamber is processed in situ. In addition, the gaseous mixture reacts with the etch stop layer on the wafer in a controlled manner so that critical dimensions ... |
| priorityDate | 2001-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.