http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10058444-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3072 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32308 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2000-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b374c40640f87c4d1edeb11c1275516c |
| publicationDate | 2002-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10058444-A1 |
| titleOfInvention | Semiconductor laser element and method for producing a semiconductor laser element |
| abstract | The semiconductor laser element has a first semiconductor layer system grown on a substrate with a first material with a lattice constant that is not equal to the lattice constant of the substrate. A quantization layer with a larger lattice constant than the lattice constant of the first semiconductor material has grown on the first semiconductor material such that a quantization effect is formed in the quantization layer which suppresses or strongly inhibits the diffusion of the charge carriers. A second semiconductor layer system has grown on the quantization layer. |
| priorityDate | 2000-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.