| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2000-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f3afefe3824ab19112aad1788bb2314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c4454b1d135ae27c70c88f96c9ae16f |
| publicationDate |
2001-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10055431-A1 |
| titleOfInvention |
Method for manufacturing capacitors of a semiconductor component |
| abstract |
The invention relates to a method for producing capacitors of a semiconductor component. This method comprises a method for producing a capacitor of a semiconductor component, with the following steps: a lower electrode is formed on a semiconductor substrate which is formed with various structures which are required for producing a semiconductor component; an amorphous TaON thin layer is deposited over or on the lower electrode; and the deposited amorphous TaON thin film is subjected to a thermal process step at a low temperature and a thermal process step at a high temperature, so as to form a dielectric TaON layer; and an upper electrode is formed on the dielectric TaON layer. Because the TaON thin film is used as the dielectric layer, better electrical properties can be achieved and at the same time a capacity required for the semiconductor component can be ensured. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10064068-B4 |
| priorityDate |
1999-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |