| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2000-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d81edbfb0bd232f90fee4c6059ab81e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f0dcc8d6d66aded1250c07e19a2f590
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14cf08667d6c3df75a84983aad15ec22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52f6478de6771fb6f941eb0cf030a3c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_823b0533edfc7e7b79e451b44122b042 |
| publicationDate |
2008-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10046021-B4 |
| titleOfInvention |
Method for producing capacitors on semiconductor substrates in a device for forming thin films |
| abstract |
Process for forming a capacitor on a substrate, comprising the following steps: Forming a lower electrode (121) on the substrate (101); Forming an amorphous dielectric sub-layer on the lower electrode (121) by MOCVD; Oxygen radical or plasma heat treatment of the dielectric sublayer; wherein the step of forming the dielectric sub-layer and the oxygen radical or plasma heat-treating step of the dielectric sub-layer are repeatedly performed to form a continuous dielectric layer (123), and then further the method of crystallizing the dielectric layer (123) having a crystallization heat treatment; and forming an upper electrode (125) on the oxygen radical or plasma heat treated dielectric layer (123). |
| priorityDate |
1999-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |