| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 |
| filingDate |
2000-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f0dcc8d6d66aded1250c07e19a2f590
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d81edbfb0bd232f90fee4c6059ab81e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_823b0533edfc7e7b79e451b44122b042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52f6478de6771fb6f941eb0cf030a3c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14cf08667d6c3df75a84983aad15ec22 |
| publicationDate |
2001-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10046021-A1 |
| titleOfInvention |
Device for forming thin films and method for producing capacitors on semiconductor substrates using this device |
| abstract |
Methods and devices for the oxygen radical or plasma heat treatment of various layers (for example a lower electrode, a dielectric layer or an upper electrode) of a microelectronic capacitor on a substrate are specified here in detail. By oxygen radical or plasma heat treatment of the lower electrode of the capacitor, the leakage current property of the capacitor can be improved, so that the leakage current is reduced, for example by a factor of 100 or more. The amount of contaminants on the lower electrode can also be reduced. Oxygen radical or plasma heat treatment of the dielectric layer of the capacitor can improve the leakage current properties of the capacitor and can reduce the amount of contaminants in the dielectric layer. By ozone heat treatment of the upper electrode, the leakage current characteristic of the capacitor can be improved and the number of oxygen vacancies that are formed in the dielectric layer can be reduced. A device for producing a thin film on a substrate has a multifunctional chamber for depositing a dielectric layer on the substrate and an oxygen radical or plasma heat treatment unit which is connected to the multifunctional chamber. The oxygen radical or plasma heat treatment unit supplies an oxygen radical or a plasma gas to the ... |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008024519-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9053802-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8304823-B2 |
| priorityDate |
1999-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |