| abstract |
A chemical vapor deposition process for producing a porous glass film of organosilica of the formula Si v O w C x H y F z wherein v + w + x + y + z = 100%, v is 10 to 35 at%, w is 10 to 65 Atomic%, x is 5 to 30 atomic%, y is 10 to 50 atomic%, and z is 0 to 15 atomic%, where v is preferably 20 to 30 atomic%, w is 20 to 45 atomic% x is 5 to 20 atomic%, y is 15 to 40 atomic%, and z is 0; the method comprising: Providing a substrate within a vacuum chamber; Introducing gaseous reagents comprising at least one precursor selected from the group consisting of an organosilane and an organosiloxane and a porogen into the vacuum chamber; Applying energy to the gaseous reagents in the vacuum chamber to initiate a reaction of the gaseous reagents and to prepare a preliminary film on ... |