http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-270407-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9ee1cd30c7b0c3ac824db992572eb7d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1988-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af138685e551b587858dfc31ff210e79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeae93d6a5528fa34b0ddc30801c6ae4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b4b69d6847729d18d7a5cb2f46f97be |
| publicationDate | 1989-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DD-270407-A1 |
| titleOfInvention | METHOD FOR SELECTIVELY APPLYING DILUTED METALS TO A III B V-COMPOUND OR COMPOUND SEMICONDUCTORS |
| abstract | The invention relates to a method for selective plamachemic etching of thin noble metal or noble metal-containing layers on AIIIBV compound or Mischverbindungshalbleiteroberflaechen. By using a low ionic or radical energy to exploit desorption and sublimation enthalpy differences between noble metal and earth metal halides to reach the free AIIIBV compound or mixed compound semiconductor surface, it is possible, above all, to selectively remove gold-containing layers and structures such as those for micro-optoelectronics and AIIIBV microelectronics are required to generate. |
| priorityDate | 1988-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.