http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-268084-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fab5a78161702097f97524ce6e5cdcd7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 1987-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_facca5cb885df7485245511869d948f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1049cc034e06df2f5284c1064ea3a344 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fd3392c143595aabe65bb14d1a2028f |
| publicationDate | 1989-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DD-268084-A1 |
| titleOfInvention | METHOD FOR STRUCTURING A SURFACE |
| abstract | The invention relates to a process for structuring a surface for all applications in microlithography, for the production of semiconductor structures, exposure templates, implant masks, printing plates, optical diffraction gratings, for the production of relief structures and the like. The aim of the invention is the saving of silver and a more effective method for structuring a surface. The object of the invention is achieved in that the single or the uppermost resist layer with a known chalcogenide of the structure XzY2z, where X is an element of the group Ge, As, Ga, In, Si, Na, K, Li or a mixture of several of these elements, Y is a chalcogen and 0z1, coated and irradiated with metal ions that form a refractory complex with the resist. The irradiation can be done by means of finely focused ion beam or through a mask. As metal ions, Ag, Cu or Au ions can be used. |
| priorityDate | 1987-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.