http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-253537-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9ee1cd30c7b0c3ac824db992572eb7d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-02 |
| filingDate | 1986-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27c3ed83397062c198e023140b46353d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31a9fdc72898b4d2c6d595953c37d948 |
| publicationDate | 1988-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DD-253537-A1 |
| titleOfInvention | METHOD FOR THE PRODUCTION OF ONE-SIDED LIGHT ABSORBING ELECTRODE |
| abstract | The invention relates to a method for producing a one-sided light-absorbing electrode for electroluminescent displays. The aim is a method for producing a one-sided light-absorbing electrode, which retains its absorbing properties in layer thickness variations in the 10% range and their production is economical. The invention has for its object to provide a method for producing a light-absorbing electrode with high Leitfaehigkeit on the basis of ITO, which has no transparency increase and can be produced by electron beam evaporation. According to the invention, the object is achieved by carrying out a vapor deposition with Al without vacuum interruption after the ITO coating, and then carrying out a vacuum annealing at temperatures between 300 and 450 ° C. |
| priorityDate | 1986-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID71586773 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID428438116 |
Total number of triples: 13.