http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-245265-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3bfedd8ba4800708cecfd357707f8f67
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 1985-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49b7b9e982ab82d660ee11d63873a574
publicationDate 1987-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DD-245265-A1
titleOfInvention METHOD FOR IMAGING DOTING STRUCTURES IN MICROELECTRONIC COMPONENTS
abstract A high-resolution imaging method for doping structures in microelectronic devices based on the scanning electron microscopic EBIC technique is presented. In this case, a metal layer is applied to the liberated from the dissolution limiting surface layers semiconductor substrate, which forms a signal collection Schottky diode or ohmic contacts with the differently doped regions depending on the type of conduction for the derivation of the intrinsic pn-transitions induced currents and the one such high Electron transparency possesses that the smallest probe energies can be used for imaging and thus lateral resolutions in the sub-micrometer range are achievable. In this way, with little preparation and testing effort, non-mappable dopant structures, regardless of their size and location, become available in the device, and the method can be used as a universal, effective control and measurement methodology for development, manufacturing control, and fault analysis on VLSI devices become.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006010495-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006010495-B4
priorityDate 1985-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.