| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f46d97096dc2dbe797c769d995c22b2f |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
1985-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_728efa13f1ee8d742396478448801a01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47d4f07c8059da5d6eaf52d957ec5369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eb7b9c3fffa0b3169d6c7ca61dc775f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04e2987763af78310e3cfe7c003c18f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9518297787e2328733ede92019ec8f99 |
| publicationDate |
1986-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DD-235134-A1 |
| titleOfInvention |
PROCESS FOR PLASMACHEMICAL APPLICATION |
| abstract |
The invention relates to a method for plasma-chemical etching on a silicon nitride or polysilicon layer applied to a semiconductor substrate in the manufacture of microelectronic components. The aim and the object of the invention is to enable the plasma-chemical etching of structures with very small dimensions in a simple and economic manner with high accuracy. According to the invention, the object is achieved by carrying out the plasma-chemical etching at a pressure of 80... 200 m torr with an etching mixture of carbon tetrafluorocarbon and 5 to 30% by volume of nitrogen. |
| priorityDate |
1985-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |