| abstract |
The invention relates to a positive photoresist having improved film-forming properties, which is particularly well-suited for use in the fabrication of microelectronic device structures. The object of the invention is the development of a new positive photoresist with improved coating properties and its use in the production of structures especially for microelectronic devices. According to the invention, this is achieved by forming a positive photoresist which is developable after exposure in an alkaline medium and consists of naphthoquinonediazide (1,2) derivatives, polymeric binders, solvents and other additives, a polysiloxane-polyether copolymer compound having a concentration of 0.0001% to 1.0% based on the photoresist is added. |