http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-214967-A1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
filingDate 1983-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b38e758d3a1d18d9f1fa0f651acc883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba9e3ca05f4407ac9e7fd9cd3e9eef37
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publicationDate 1984-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DD-214967-A1
titleOfInvention METHOD FOR REDUCING CRYSTAL FLUID REDUCTION IN BORDIFLOURID IMPLANTED SEMICONDUCTOR MATERIALS
abstract The invention relates to a method for reducing crystal defects in borifluride implanted semiconductor materials in the manufacture of preferably CMOS and bipolar circuits, in which the crystal defect density is reduced, the dislocation ring diameter is reduced and the recovered fluorine concentration is reduced. According to the invention, the implanted semiconductor substrates are introduced at a temperature of 800 ° C. into a quartz working tube under nitrogen or an N 2/0 deep 2 mixture, which is then evacuated to a pressure of 10 to 200 Pa. The nitrogen flow rate is 10 to 300cm high 3 / min at a ramped temperature to 1000 degrees C. Under these conditions, an annealing takes place in a time of> equal to 10 minutes. Finally, the temperature is ramped down to 800 degrees C and the semiconductor substrates are extended out of the working tube under nitrogen.
priorityDate 1983-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 22.