http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-207591-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9ee1cd30c7b0c3ac824db992572eb7d |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate | 1982-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b210ae74fc1e38629055b0f5b6d7336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_434e1076834b93be89fcc74ff49ee2db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3a6864243a643a566849af6565fd38d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cd85511aa4a49685612b0a7b0c7efec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1866004245b3028ee8c12715f3e3969d |
publicationDate | 1984-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DD-207591-A1 |
titleOfInvention | PROCESS FOR THE ANISOTROPIC AETZEN OF CONNECTING SEMICONDUCTORS |
abstract | The invention relates to a process for the anisotropic etching of compound semiconductors. The essence of the invention is that a caustic agent is used, which contains Na below 2 CO down 3 and H down 2 O 2 below. The application of this etching agent allows, in contrast to all other known anisotropic etching solutions in the (011) or (011) direction on (100) -oriented surfaces to produce V-shaped or trapezoidal etching groove cross-sections which are used to define gap directions for the Separation by columns, for the production of buried structures, for the production of facets for Lichtfuehrung and for the production of diffusion areas with certain geometric shapes are applied. |
priorityDate | 1982-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23616742 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448688621 |
Total number of triples: 16.