http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-207591-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9ee1cd30c7b0c3ac824db992572eb7d
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 1982-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b210ae74fc1e38629055b0f5b6d7336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_434e1076834b93be89fcc74ff49ee2db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3a6864243a643a566849af6565fd38d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cd85511aa4a49685612b0a7b0c7efec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1866004245b3028ee8c12715f3e3969d
publicationDate 1984-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DD-207591-A1
titleOfInvention PROCESS FOR THE ANISOTROPIC AETZEN OF CONNECTING SEMICONDUCTORS
abstract The invention relates to a process for the anisotropic etching of compound semiconductors. The essence of the invention is that a caustic agent is used, which contains Na below 2 CO down 3 and H down 2 O 2 below. The application of this etching agent allows, in contrast to all other known anisotropic etching solutions in the (011) or (011) direction on (100) -oriented surfaces to produce V-shaped or trapezoidal etching groove cross-sections which are used to define gap directions for the Separation by columns, for the production of buried structures, for the production of facets for Lichtfuehrung and for the production of diffusion areas with certain geometric shapes are applied.
priorityDate 1982-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23616742
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448688621

Total number of triples: 16.