http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-200174-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8ef3f9c02a7e76d9811838bf941a785
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
filingDate 1981-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_221605e0026c1c84ab18e4bb940cb2c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98dcbcd546607e332fc64382244fc337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10dd02e66e01d98961f9f907e41243ef
publicationDate 1983-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DD-200174-A1
titleOfInvention METHOD FOR PRODUCING ELECTRON AND ROLE GENESIS
abstract According to the object of the invention to provide positive and negative working, easily accessible polymeric electron or Roentgenresists to provide the development of the irradiated areas a comparatively low absorbed dose, a method according to the invention, according to which Methacrylsaeureeinheiten containing co- or Terpolymers are reacted before application to a substrate in bulk or in solution with saturated and / or unsaturated aliphatic and / or aromatic carboxylic acid chlorides or anhydrides. The reaction products containing anhydride groups are subsequently heated to 80 to 180 ° C. after application on a wafer to remove the solvent, then irradiated, the irradiated or unexposed areas are removed with a solvent, and finally the remaining lacquer layer is tempered. By any variation in the content of substituted anhydride groups formed in the polymer, resists having selected lithographic properties are available.
priorityDate 1981-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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