http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DD-160382-A3

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
filingDate 1979-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e44866fb9e44f228146397c610bda41b
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publicationDate 1983-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DD-160382-A3
titleOfInvention METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS
abstract The invention relates to the field of semiconductor technology. The aim of the invention is the improvement of device properties that can be achieved by increasing the Minoritaetstraeger life or improving the properties of the Si / SiO 2 deep interface. The object of the invention is thus the improvement of Gettereffektivitaet. The essence of the invention is the removal of an already by gettering pollution profile from the semiconductor body of a renewed getter process. The application of the invention is useful in the manufacture of all semiconductor devices, for the function of a high Minoritaetstraeger life and / or a very perfect semiconductor-isolator interface is required. These include e.g. Si diode targets, CCD devices, phototransistors and analog circuits.
priorityDate 1979-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.