| abstract |
The invention relates to a silicon designna detector formed as a PIN diodenmonocrystalline technologynsilicon. The purpose is to achieve greater sensitivityndetector enabled by the smaller onenserial diode PIN diode, as wellnpossibility of narrowing the detected radiation band.nDepending on how the PIN diode is connected, alsonto meet the prompt detection requirement ornpossibility of very low energy detectionnradiation. This purpose is achieved bynthat the N ornP is the side facing awaynplanar NP or PN transition diminishednat 30 to 100 yum and surface at leastnone side of the PIN diode made in this way isnfitted with a metal filter. Metal is preferredna 1 to 100 nm aluminum filternlayer. The detector can be used whennX-ray analyzes, e.g.nlow-temperature and high-temperature process analysisnplasma. |