http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-217085175-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6300f22cdf3618c4e080d50835b0ccdd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2021-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b36cd96c9eaca68529244b87a3cf0fdb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b653ee02faaf7918044fa44499307e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b44bd8c08045570df50477a86384cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78d79a5fbb781ac2ccee8828b67a69cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b88ab5fe8b5e825c49707e6a4cbebe4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c90c2bda80f0d7f1832bb3abc6dfc823 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87c02261056186e7280585e9efdb5659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54c6830c816516f9c9799a34066e37af |
| publicationDate | 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-217085175-U |
| titleOfInvention | A high-frequency high-power transistor power aging screening device |
| abstract | The utility model relates to a high-frequency and high-power transistor power aging screening device, which belongs to a device for screening and detection of electronic products. Including transistor device placement and heat dissipation device, two-way device voltage and ammeter, two-way power supply filter and two-way aging power supply; high-frequency high-power transistors are fixed on transistor device placement and heat-dissipating devices, high-frequency high-power transistors are divided into two channels, Each channel is connected to a voltage and ammeter, a power filter and an aging power supply in turn. The utility model can screen the high-frequency and high-power transistors in time, thereby improving the screening and detection efficiency of the high-frequency and high-power transistors, controlling the cost, and significantly improving the delivery cycle. |
| priorityDate | 2021-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.