http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-216711607-U
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7825bf5db8885784c7bfabb126335b87 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-107 |
filingDate | 2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_269199b912d643ae5e17c44b3d48d44b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0b49197279c7b3ee4639734b7aeb49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_706fff95d171d528aff6d8cab29a1506 |
publicationDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-216711607-U |
titleOfInvention | A high-purity polysilicon production system |
abstract | The utility model discloses a high-purity polycrystalline silicon production system, comprising a reduction device, a tail gas recovery device, a rectification column group 1, a reactor 1, a rectification column group 2, a hydrogenation device, a slurry device, a rectification column group 3 and Reactor two; wherein the bottom outlet of rectifying tower group one is connected to the inlet of reactor one through silicon tetrachloride source one, and the top outlet of rectifying tower group one is connected to reactor two through dichlorodihydrosilicon source one. The inlet, the bottom outlet of the rectifying tower group two is connected to the inlet of the reactor two through the silicon tetrachloride source three, the upper outlet of the rectifying tower group two is connected with the upper inlet of the rectifying tower group three, and the third The top outlet is connected to the inlet of reactor 1 through dichlorodihydrosilicon source 2, the outlet of reactor 1 is connected through product 1 and the upper inlet of rectifying column group 2, and the outlet of reactor 2 is connected through product 2 and rectifying column group 2. Two lower inlet connections. The high-purity polycrystalline silicon production system of the utility model can react and separate methyl monochlorosilane and methyl dichlorosilane, and can be used for producing high-purity solar-grade and electronic-grade polycrystalline silicon. |
priorityDate | 2021-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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