http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-216528949-U
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39a343ae0a2cd38717203e289062f9e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_132013638df900d500b5d2a9b74b48d1 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-01 |
filingDate | 2021-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f15212fff565ac2461e619b78aebbfee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af63da3b43b7f5f03a53596d08d3d91a |
publicationDate | 2022-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-216528949-U |
titleOfInvention | An Integrated Passive Device Based on Thermal Oxidation |
abstract | The utility model relates to an integrated passive device made based on a thermal oxidation method, comprising: a substrate; a first dielectric layer, which is located on the substrate; and a capacitor, comprising: a capacitor lower electrode, which is located on the first dielectric layer. a dielectric layer; a metal oxide layer located on the capacitor lower electrode in the first dielectric layer; and a capacitor upper electrode located on the metal oxide layer. The integrated passive device uses a metal that is easy to form a dense oxide layer as the electrode of the capacitor device in the integrated passive device, and silver oxide, aluminum oxide or zinc oxide made by the thermal oxygen method is used as the dielectric layer, which can effectively reduce the thickness of the dielectric layer and improve the capacitor. The capacitance value of the device is simple, and the effect is obvious. |
priorityDate | 2021-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.