http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-216435907-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa804e1ed4db3c56b2d165c3fc7c8d52 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c0f66282b6410ae678815094636f05d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d24b3f6d8859c477d828a50b578d1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1671b2b4cd48bfccbca28ff7bba9cab4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fb30350a897f4b85d3c675d49f7938a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b5c282a4b0e713a2f00ab01a3ad4f2f |
| publicationDate | 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-216435907-U |
| titleOfInvention | Image sensors that improve plasma-induced damage |
| abstract | In the image sensor for improving plasma-induced damage provided by the utility model, the substrate includes a pixel area and a test device formation area, a back ground structure is formed on the back side of the substrate of the pixel area, and a test device is formed in the test device formation area; The connection layer is formed on the front side of the substrate, and the interconnection structure of the interconnection layer is electrically connected with the gate structure of the test device; the metal pad groove is located between the pixel area and the test device formation area and penetrates the substrate, and the metal pad is welded A via hole is formed in the interconnect layer at the bottom of the pad recess; a part of the metal pad is located in the metal pad recess and fills the via hole to be electrically connected with the interconnect structure, and another part of the metal pad spans to The pixel area is electrically connected to the backside grounding structure. In this way, the charges generated by the plasma etching to form the metal pads can be released through the backside grounding structure, which can improve or even eliminate the effects of plasma-induced damage on the test device. |
| priorityDate | 2021-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.