http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-216357893-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7843d80416cf408bbb1c43d4eee0cecd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K5-02 |
| filingDate | 2021-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b6e9b53a8d6c510fbfd92cac87cee9 |
| publicationDate | 2022-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-216357893-U |
| titleOfInvention | High-power temperature controller with good heat dissipation performance |
| abstract | The utility model discloses a high-power temperature controller with good heat dissipation performance, which comprises a temperature control box body, wherein a front panel is arranged on the front end face of the temperature control box body, a switch button, an up-regulation button, a down-regulation button and a temperature display are arranged on the front panel, the switch button, the up-regulation button and the down-regulation button are arranged on the lower side of the front panel side by side, and the temperature display is arranged at the right upper end of the front panel. The high-power temperature controller with good heat dissipation performance can quickly dissipate heat generated by the silicon controlled rectifier U1 during working, and meanwhile, when a high-power silicon controlled rectifier U1 is selected, electric arcs cannot be generated in the power-on and power-off states, and through the arrangement, the output power of the silicon controlled rectifier U1 can reach 2000W; the whole sealing effect is good, the protection effect on internal components is good, the heat dissipation effect is good, the stability of the circuit is high when the power is on and off, and the output power of the silicon controlled U1 is large. |
| priorityDate | 2021-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.