http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-215910592-U

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_441400d4cfc03e4402398f840c407953
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 2021-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f9646abc6ba6d5d3b76524a6fa977a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b59d7ffc76ff6d9547143470ffa160d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d87e3a81894549e0e9f32c48d7beb50d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e392a2ba7390b51dd8f977da666548ea
publicationDate 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-215910592-U
titleOfInvention Be suitable for field effect transistor to burn and smelt experimental board of smelting always
abstract The utility model discloses a burn-in board suitable for a field effect transistor burn-in test, relates to the technical field of component reliability tests, and solves the problem that the high-temperature reverse-biased burn-in test of field effect transistors cannot be realized in a large scale. The aging board comprises a substrate, the substrate is divided into a power interface area and a working area, the power interface area comprises a power positive end and a power negative end, the working area comprises m rows of n rows of test units used for testing field effect tubes, each test unit comprises a protective tube and a device station matched with the base pins of the field effect tubes, each device station comprises a grid contact, a drain contact and a source contact, the power positive end is electrically connected with the drain contact through the protective tube, and the power negative end is in short circuit connection with the grid contact and the source contact. The aging plate of the utility model has reasonable structure design and can realize reliable high-temperature reverse-biased aging test of any number of devices between 1 and 80 devices.
priorityDate 2021-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978

Total number of triples: 16.