http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-215498704-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03e7e659bf0846b79a1d885cad444c5b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F27-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02J7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M3-335 |
| filingDate | 2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7acfb0d57ca003faef4d3fd825a36ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6301a85dd84ce05aaae1d718427c070c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b61fc81f9434335458f6ea1a9b34478 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08a22267e1c3e58c80bd2c3bbad073f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77451f32907cf3eac1cd2d6d8e6afbbd |
| publicationDate | 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-215498704-U |
| titleOfInvention | Charger with high power density structure |
| abstract | A charger with a high power density structure has small volume and high space utilization rate. Comprises a casing, arranged in the casingThe transformer comprises a control circuit board and a transformer, wherein the control circuit board is divided into a main circuit board and an auxiliary circuit board, the transformer is arranged on the main circuit board, and the auxiliary circuit board is arranged above the main circuit board and close to the top end face of the transformer in an up-and-down overlapping mode through a vertically arranged supporting seat; and a power control chip U1 made of ultra-high integration gallium nitride is connected between the primary side and the secondary side of the transformer in a bridging manner. The novel power control chip made of the ultra-high integration gallium nitride material is bridged between the primary and secondary sides of the transformer, so that the power control chip integrates a control part and a power switch device and signal feedback, the space is effectively saved, and the power density of the charger is improved. The power density of the charger can reach 17W/in 3 Under the condition of the same overall dimension of the charger, the output power of the charger can be more than 3 times that of the charger in the prior art. |
| priorityDate | 2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117559 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169 |
Total number of triples: 22.